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Country CodeHITACHI
ANALOG DEVICES
UNISONIC TECHNOLOGIES
RENESAS
JSCJ
JCET
Your search D669A and relate product result :60 items
TO-126
Renesas/hit
80C51 8-bit microcontroller family with extended memory 96 kB Flash with 2 kB RAM
Description: NPN Epitaxial Planar Silicon Transistor Features: High DC Current Gain Low Collector-Emitter Saturation Voltage High Reliability Epitaxial Planar Structure Complementary to D668A App
Stock:10000
Minimum:17
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Description: The 2SD669A is a NPN silicon epitaxial transistor manufactured by Changjiang Electronics Technology (CJ). Features: High DC current gain High collector-emitter voltage Low collector-e
Stock:215
Minimum:5
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Stock:1620
Minimum:5
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Stock:950
Minimum:5
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Stock:2925
Minimum:5
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Stock:755
Minimum:5
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TO-126
长电
80C51 8-bit microcontroller family with extended memory 96 kB Flash with 2 kB RAM
Description: The 2SD669A is a silicon NPN power transistor in a TO-126 package. Features: High DC Current Gain Low Collector-Emitter Saturation Voltage High Power Dissipation High Reliabi
Stock:10000
Minimum:50
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TO-126
HIT
80C51 8-bit microcontroller family with extended memory 96 kB Flash with 2 kB RAM
Description: 2SD669A is a silicon NPN power transistor designed for use in audio and general purpose applications. Features: High DC current gain Low collector-emitter saturation voltage High coll
Stock:10000
Minimum:18
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Description: 2SD669AC is a NPN epitaxial planar silicon transistor manufactured by Hitachi. Features: - Low collector-emitter saturation voltage - High collector current - High breakdown voltage - Hi
Stock:10000
Minimum:18
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HSD669A is a NPN silicon epitaxial planar transistor manufactured by Hualon Microelectronics Corporation. It is designed for use in general purpose amplifier and switching applications. Features: -Hi
Stock:10000
Minimum:2
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Description: NPN Silicon Transistor Features: High voltage High speed switching High reliability Low collector-emitter saturation voltage Applications: Switching applications High voltage, h
Stock:10000
Minimum:3
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Stock:10000
Minimum:2
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Description: 2SD669A is a NPN bipolar junction transistor (BJT) with a TO-126 package. Features: Low collector saturation voltage High gain Low collector-emitter saturation voltage High switc
Stock:10000
Minimum:25
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Stock:10000
Minimum:19
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Stock:25000
Minimum:250
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Stock:35
Minimum:5
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Stock:35
Minimum:5
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HSD669A-C is a high-speed, low-power, dual NPN transistor manufactured by Hualon Microelectronics Corporation. It is packaged in a TO-126 package and is designed for use in high-speed switching applic
Stock:10000
Minimum:17
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Description: NPN Epitaxial Planar Silicon Transistor Features: High DC Current Gain Low Collector-Emitter Saturation Voltage High Reliability Low Noise High Voltage High Frequency Low Power Con
Stock:10000
Minimum:4
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Description: The 2SD669A-C is a silicon NPN power transistor in a TO-92 package. Features: Low collector-emitter saturation voltage High current gain High breakdown voltage Low noise App
Stock:10000
Minimum:12
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Stop production experts, we can provide a large number of electronic components that have been stopped production and are difficult to find, to facilitate the maintenance company