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Country CodeINFINEON
EUPEC
Your search FP75R12KT3 and relate product result :10 items
MODULE
Eupec
10+
IGBT Modules up to 1200V PIM; Package: AG-ECONO3-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EconoPIM™ 3;
Description: The FP75R12KT3 is a three-phase, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: Maximum collector-emitter voltage of 1200V Maximum collector current of 75A Maxi
Stock:2000
Minimum:1
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Description: Infineon IGBT Module Features: Low switching losses High current capability High voltage capability Low inductance Low thermal resistance High frequency operation Low
Stock:199
Minimum:1
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Description: Infineon IGBT Module Features: Low switching losses High current capability High voltage capability Low inductance Low thermal resistance High frequency operation Low
Stock:3356
Minimum:1
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Description: The FP75R12KT3 is a three-phase, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: Maximum collector-emitter voltage of 1200V Maximum collector current of 75A Maxi
Stock:2000
Minimum:1
Favorite
MODULE
Infineon Technologies AG
19+
IGBT Modules up to 1200V PIM; Package: AG-ECONO3-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EconoPIM™ 3;
Description: This is a 1200V, 75A, 3-phase insulated gate bipolar transistor (IGBT) module from Infineon. Features: Low switching losses High short-circuit capability Low noise emission Low induct
Stock:2000
Minimum:1
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MODULE
Eupec
15+
IGBT Modules up to 1200V PIM; Package: AG-ECONO3-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EconoPIM™ 3;
Description: The FP75R12KT3 is a three-phase, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: Maximum collector-emitter voltage of 1200V Maximum collector current of 75A Maxi
Stock:9998
Minimum:1
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Stock:160
Minimum:1
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IGBT Modules up to 1200V PIM; Package: AG-ECONO3-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EconoPIM™ 3;
Stock:2000
Minimum:1
Favorite
Description: The FP75R12KT3 is a three-phase, insulated-gate bipolar transistor (IGBT) power module from Infineon Technologies. This module is designed for use in motor drives, welding systems, UPS, a
Stock:2000
Minimum:1
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