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Descrição do produto
900V N-channel QFET
Todos os nomes de produtos, marcas registradas, marcas e logotipos usados neste site são de propriedade de seus respectivos proprietários. A representação, descrição ou venda de produtos com esses nomes, marcas registradas, marcas e logotipos é apenas para fins de identificação e não se destina a indicar qualquer afiliação ou autorização de qualquer detentor de direitos.
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary,
planar stripe, DMOStechnology.This advanced technology has been especially tailored to minimize on-state re
sistance, provide superior switching performance, and withstand high energy pulse in the avalanche and com
mutation mode. These devices are well suited for high efficiency switch mode power supply.
Features
11.4A, 900V, RDS(on) = 0.96Ω@ VGS = 10 V
Low gate charge ( typical 72 nC)
Low Crss ( typical 30 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Thermal Characteristics
Symbol | Parameter | Typ | Max | Units | ||||||||||
Rθ | JC | Thermal Resistance, Junction-to-Case | -- | 0.42 | °C/W | |||||||||
Rθ | CS | Thermal Resistance, Case-to-Sink | 0.24 | -- | °C/W | |||||||||
Rθ | JA | Thermal Resistance, Junction-to-Ambient | -- | 40 | °C/W |
Pré-visualização das 3 primeiras páginas da folha de dados
Algum número de peça do mesmo fabricante
Some Part number from the same manufacture Fairchild Semiconductor |
FQA11N90C FQA11N90C - 900V N-channel Advanced QFET C-series |
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FQA14N30 300V N-channel QFET |
FQA15N70 700V N-channel QFET |
FQA160N08 80V N-channel QFET |
FQA16N25 250V N-channel QFET |
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FQA16N50 500V N-channel QFET |
FQA170N06 60V N-channel QFET |
FQA17N40 400V N-channel QFET |
FQA17P10 100V P-channel QFET |
FQA18N50V2 FQA18N50V2 - 500V N-channel Advanced QFET V2 Series |
FQA19N20 200V N-channel QFET |
FQA19N20C 200V N-channel Advance Q-FET C-series |
FQA19N20L 200V N-channel Logic Level QFET |
FQA19N60 600V N-channel QFET |
FQA20N40 400V N-channel QFET |
74F114SC : Bipolar->F Family Dual JK Negative Edge-triggered Flip-flop W/common Clocks And Clears 74LVT32373GX : Low Voltage 32-Bit Transparent Latch With 3-STATE Outputs (Preliminary) DM9602N : Bipolar->TTL Family Dual Retriggerable Resettable One Shots NC7S08M5X : Bipolar->S Family Tinylogic HS 2-Input And Gate NDB410AE : Enhancement N-Channel N-channel Enhancement Mode Field Effect Transistor SFS9540 : 100V P-channel A-FET FSDH0265RLX : Pmic - Ac Dc Converters, Offline Switcher Integrated Circuit (ics) Tube 8 V ~ 20 V; IC SWIT PWM GREEN CM HV 8LSOP Specifications: Packaging: Tube ; Package / Case: 8-SOP, 8-LSOP ; Power (Watts): 27W ; Voltage - Input: 8 V ~ 20 V ; Voltage - Output: 650V ; Frequency Range: 92 ~ 108kHz ; Operating Temperature: 25°C ~ 140°C ; Output Isolation: Isolated ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant FDP7042LS62Z : 50 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0090 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1 FDP8030LS62Z : 80 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0035 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1 |
mesma categoria
Same catergory |
BA482/A52R : Diode Band-switching. Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. to 1.6 pF Low diode forward resistance: max. to 1.2. Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg. FS25SM-9A : for General Switching. Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory. IRHM93064 : Repetitive Avalanche And Dv/dt Rated HexFET(r) Transistor -60v -35a: -60v, -35a. KSA614 : PNP Epitaxial Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO PC TJ TSTG Parameter Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Ratings Units °C Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) Parameter Collector-Base Breakdown. P600A : Low Power Rectifier. Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack see page 17 Standard Lieferform gegurtet in Ammo-Pack siehe Seite 17 Maximum ratings Type Typ 600 S Repetitive. SXT3904 : NPN Silicon Switching Transistor. q High current gain: mA q Low collector-emitter saturation voltage Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, 95 °C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS For detailed. UPA843TC : NPN Silicon RF Transistor With 2 Different Elements in a Flat-lead 6-pin Thin-type Ultra Super Minimold. 02DZ16-Z : 16.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE. AP02N60H-H : 1.4 A, 700 V, 8.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 700 volts ; rDS(on): 8.8 ohms ; Package Type: ROHS COMPLIANT PACKAGE-3 ; Number of units in IC: 1. CK45-B3FD331KYGR : CAPACITOR, CERAMIC, MULTILAYER, 3000 V, B, 0.00033 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.30E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 3000 volts ; Mounting. FR10300 : RESISTOR, 15 W, 2; 5 %, 10 ohm - 200 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis ; Operating Temperature: -55 to 150 C (-67 to 302 F). KF80N08F : 56 A, 75 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 75 volts ; rDS(on): 0.0100 ohms ; Package Type: TO-220, TO-220IS(1), 3 PIN ; Number of units in IC: 1. RN2114FV : 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: 2-1L1A, VESM, 3 PIN. SR820K05DS : RESISTOR, VOLTAGE DEPENDENT, 66 V, 3 J, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Power Rating: 0.1500 watts (2.01E-4 HP) ; Operating DC Voltage: 66 volts ; Standards and Certifications: RoHS. 2N3444LEADFREE : 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39. s: Polarity: NPN ; Package Type: TO-3, TO-39, TO-39, 3 PIN. 2SB1308-P : 3000 mA, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: SOT89, PLASTIC, SOT-89, 3 PIN. |
170 comentários de compradores de Portugal
JARED
Length of registration:1 years
The part is working fine
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10/07/2022
ALEXIS GRUET
Length of registration:2 years
Real part, fast service, highly recommended
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07/16/2021
carlos manuel silva ferreira
Length of registration:1 years
pre?o e qualidade agradaveis
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02/01/2020
Carlos Gomes
Length of registration:12 years
Very satisfied with
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11/22/2017
jorge soares
Length of registration:9 years
Very satisfied with
0
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11/09/2017
Francisco Americano
Length of registration:8 years
tudo ok
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03/17/2017
Virgilio Fernando Ferreira Moreno
Length of registration:1 years
Material completo
0
0
Responder0
02/23/2017
Vitrohm Portuguesa, Lda
Length of registration:7 years
Good service
0
0
Responder0
11/16/2016
Bernardino Gon?alves
Length of registration:8 years
goood
0
0
Responder0
11/14/2016
André Gomes
Length of registration:1 years
good quality
0
0
Responder0
10/21/2016
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FQA11N90
FQA11N90 tem várias marcas em todo o mundo que podem ter nomes alternativos para FQA11N90 devido a diferenças ou aquisições regionais. FQA11N90 também pode ser conhecido como os seguintes nomes:
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