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Utsource certified used parts
As peças usadas certificadas pela Utsource fornecem as seguintes garantias:
1. A Utsource inspecionará as mercadorias, incluindo a inspeção da aparência (sem danos graves à aparência), selecionará fornecedores qualificados e honestos e garantirá uma taxa de qualificação de 98%.
2. Algumas peças são testadas pela máquina.
3. As peças certificadas pela Utsource podem ser devolvidas e reembolsadas incondicionalmente dentro de 60 dias.
Descrição do produto
BSH103
N-channel Enhancement Mode MOS Transistor
Package: SOT23 (SST3)
Todos os nomes de produtos, marcas registradas, marcas e logotipos usados neste site são de propriedade de seus respectivos proprietários. A representação, descrição ou venda de produtos com esses nomes, marcas registradas, marcas e logotipos é apenas para fins de identificação e não se destina a indicar qualquer afiliação ou autorização de qualquer detentor de direitos.
Algum número de peça do mesmo fabricante
Some Part number from the same manufacture Philips Semiconductors (Acquired by NXP) |
BSH104 BSH104; N-channel Enhancement Mode MOS Transistor |
BSH105 BSH105; N-channel Enhancement Mode MOS Transistor;; Package: SOT23 (SST3) |
BSH106 BSH106; N-channel Enhancement Mode MOS Transistor |
BSH107 BSH107; N-channel Enhancement Mode MOS Transistor |
BSH108 BSH108; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3) |
BSH111 BSH111; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3) |
BSH112 BSH112; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3) |
BSH114 BSH114; N-channel Enhancement Mode Field Effect Transistor;; Package: SOT23 (SST3) |
BSH120T BSH120T; N-channel Enhancement Mode Field-effect Transistor |
BSH121 BSH121; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3) |
BSH201 BSH201; P-channel Enhancement Mode MOS Transistor;; Package: SOT23 (SST3) |
BSH202 BSH202; P-channel Enhancement Mode MOS Transistor;; Package: SOT23 (SST3) |
BSH203 BSH203; P-channel Enhancement Mode MOS Transistor;; Package: SOT23 (SST3) |
BSH205 BSH205; P-channel Enhancement Mode MOS Transistor;; Package: SOT23 (SST3) |
BSH206 BSH206; P-channel Enhancement Mode MOS Transistor |
BSH207 BSH207; P-channel Enhancement Mode MOS Transistor;; Package: SOT457 (TSOP6, SMT6, SSOT6) |
BSH299 BSH299; P-channel Enhancement Mode MOS Transistor |
BSH301 Dual N-channel Enhancement Mode MOS Transistor |
BSN10 BSN10; BSN10A; N-channel Enhancement Mode Vertical D-mos Transistors |
BSN20 BSN20; N-channel Enhancement Mode Field-effect Transistor;; Package: SOT23 (SST3) |
BSN205 BSN205; BSN205A; N-channel Enhancement Mode Vertical D-mos Transistor |
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6A05-B : 6.0A,50V,STD,R-6. Low cost Low leakage Low forward voltage drop High current capability High surge current capability Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 2.08 grams Ratings o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive. LS831 : Dual. Ultra Low Leakage Low Drift Monolithic Dual N-channel JFET. ULTRA LOW DRIFT ULTRA LOW LEAKAGE LOW NOISE LOW CAPACITANCE |VGS1-2 /T|= 5µV/°C max. = 80fA TYP. en= 70nV/Hz TYP. CISS= 3pf MAX. ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET ABSOLUTE MAXIMUM RATINGS NOTE @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature +150°C D1 Maximum Voltage and Current. MB4005 : Package Type : MB-50, if : 40A, VRM : 50V. 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NDS9945D84Z : 3.5 A, 60 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.1000 ohms ; PD: 2000 milliwatts ; Package Type: SOIC-8 ; Number of units in IC: 2. QS8J4TR : 4 A, 30 V, 0.056 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0560 ohms ; Package Type: TSMT8, 8 PIN ; Number of units in IC: 2. 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170 comentários de compradores de Portugal
Thomas White
Length of registration:7 years
The BSH103 integrated circuit is a high-performance device designed for use in a variety of applications. It offers excellent performance in terms of power consumption, speed, and reliability. With its low power consumption and high speed, it is an ideal choice for applications requiring high performance. Additionally, it is highly reliable and has a long life expectancy, making it a great choice
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03/17/2023
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BSH103
BSH103 tem várias marcas em todo o mundo que podem ter nomes alternativos para BSH103 devido a diferenças ou aquisições regionais. BSH103 também pode ser conhecido como os seguintes nomes:
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4 vendedores Escolhas
Especialistas em produção interrompida, podemos fornecer um grande número de componentes eletrônicos que foram interrompidos e são difíceis de encontrar, para facilitar a empresa de manutenção
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