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Código do paísINFINEON
A sua pesquisa: 17N80C3 span>, o número de produtos relacionados: 55 span> unidades
TO-247
Infineon Technologies AG
N-Channel MOSFETs >500V…900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220 FullPAK; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
Description: The 17N80C3 is an N-channel MOSFET transistor manufactured by Infineon Technologies. It is designed for high-speed switching applications. Features: High-speed switching Low on-state r
Estoque:10000
Mínimo:1
Favorito
Estoque:1965
Mínimo:5
Favorito
TO-247
Infineon Technologies AG
17+
N-Channel MOSFETs >500V…900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220 FullPAK; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
Estoque:10000
Mínimo:1
Favorito
Estoque:4
Mínimo:2
Favorito
Estoque:15
Mínimo:1
Favorito
Estoque:8000
Mínimo:5
Favorito
Estoque:13000
Mínimo:5
Favorito
Description: The SPP17N80C3 is a N-channel MOSFET from Infineon Technologies. It is a high-voltage, high-speed power MOSFET with an integrated Schottky diode. Features: Low on-state resistance
Estoque:214
Mínimo:2
Favorito
Description: The SPW17N80C3 is an N-channel MOSFET from Infineon Technologies. This device is designed for use in high-side switching applications. It features a low on-resistance of 17 mΩ and a maxim
Estoque:377
Mínimo:1
Favorito
TO220F
Infineon Technologies AG
N-Channel MOSFETs >500V…900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220 FullPAK; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
Description: N-Channel MOSFET Transistor Features: - Low gate charge - Low on-resistance - Low input and output capacitance - Fast switching - RoHS Compliant Applications: - DC/DC converters - Motor
Estoque:10000
Mínimo:2
Favorito
TO-220
Infineon Technologies AG
N-Channel MOSFETs >500V?900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
DESCRIPTION: SPP17N80C3 is a N-channel power MOSFET produced by Infineon, with a package type of TO-220. FEATURES: Low gate charge Low On-Resistance Improved Power Loss High Avalanche Ruggednes
Estoque:10000
Mínimo:2
Favorito
Description: The SPB17N80C3 is a N-channel MOSFET from Infineon Technologies. It is a high-performance, low-on-resistance, and low-gate charge device designed for use in high-efficiency switching a
Estoque:10000
Mínimo:2
Favorito
TO-247
Infineon Technologies AG
05+
N-Channel MOSFETs >500V…900V; Package: PG-TO220-3; VDS max: 800.0 V; Package: TO-220 FullPAK; RDSON @ TJ=25°C VGS=10: 290.0 mOhm; IDmax @ TC=25°C: 17.0 A; IDpuls max: 51.0 A;
Description: The SPW17N80C3 is a N-channel MOSFET from Infineon Technologies. Features: * 800V drain-source voltage * 17A continuous drain current * Low gate charge * Low on-resistance * Avalanche-ra
Estoque:10000
Mínimo:1
Favorito
Estoque:1241
Mínimo:10
Favorito
Estoque:167
Mínimo:1
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Estoque:3000
Mínimo:5
Favorito
Estoque:899
Mínimo:5
Favorito
Estoque:13008
Mínimo:5
Favorito
Estoque:5590
Mínimo:5
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Estoque:20327
Mínimo:2
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Especialistas em produção interrompida, podemos fornecer um grande número de componentes eletrônicos que foram interrompidos e são difíceis de encontrar, para facilitar a empresa de manutenção